IRF3717

Infineon Technologies

IRF3717

Analog & Power

MOSFET N-CH 20V 20A 8SO

Obsolete8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.4mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2890 pF @ 10 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
PackagingTube
Part StatusObsolete
Series448
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.45V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C20A (Ta)
Max Power Dissipation2.5W (Ta)

Mechanical

Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

Environmental

Operating Temperature-55°C ~ 150°C (TJ)