IRF200P222

Infineon Technologies

IRF200P222

Datasheet

Analog & Power

MOSFET N-CH 200V 182A TO247AC

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs6.6mOhm @ 82A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs203 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9820 pF @ 50 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusActive
SeriesStrongIRFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 270µA

Electrical

Drain-to-Source Voltage200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C182A (Tc)
Max Power Dissipation556W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247AC

Environmental

Operating Temperature-55°C~175°C(TJ)