IRF1902GPBF

Infineon Technologies

IRF1902GPBF

Analog & Power

MOSFET N-CH 20V 4.2A 8SO

Obsolete8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs85mOhm @ 4A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds310 pF @ 15 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id700mV @ 250µA

Electrical

Drain-to-Source Voltage20 V
Current - Continuous Drain (Id) @ 25°C4.2A (Ta)

Mechanical

PackageTube
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

Environmental

Operating Temperature-55°C~150°C(TJ)