IRF150P221AKMA1

Infineon Technologies

IRF150P221AKMA1

Datasheet

Analog & Power

MOSFET N-CH 150V 186A TO247-3

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.5mOhm @ 100A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6000 pF @ 75 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusActive
SeriesStrongIRFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.6V @ 264µA

Electrical

Drain-to-Source Voltage150 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C186A (Tc)
Max Power Dissipation3.8W (Ta), 341W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3

Environmental

Operating Temperature-55°C~175°C(TJ)