IQE013N04LM6ATMA1

Infineon Technologies

IQE013N04LM6ATMA1

Datasheet

Analog & Power

MOSFET N-CH 40V 31A/205A 8TSON

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.35mOhm @ 20A, 10V
Base Product NumberIQE013
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3900 pF @ 20 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 51µA

Electrical

Drain-to-Source Voltage40 V
Current - Continuous Drain (Id) @ 25°C31A (Ta), 205A (Tc)
Max Power Dissipation2.5W (Ta), 107W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device PackagePG-TSON-8-4

Environmental

Operating Temperature-55°C~175°C(TJ)