Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 41mOhm @ 35.5A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8180 pF @ 100 V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Series | CoolMOS™ P6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.5V @ 2.96mA |
| Drain-to-Source Voltage | 600 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 77.5A (Tc) |
| Max Power Dissipation | 481W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-247-4 |
| Supplier Device Package | PG-TO247-4 |
| Operating Temperature | -55°C~150°C(TJ) |
|---|