IPW65R145CFD7AXKSA1

Infineon Technologies

IPW65R145CFD7AXKSA1

Datasheet

Analog & Power

MOSFET N-CH 650V 17A TO247-3

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs145mOhm @ 8.5A, 10V
Base Product NumberIPW65R145
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1694 pF @ 400 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusActive
SeriesAutomotive, AEC-Q101, CoolMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 420µA

Electrical

Drain-to-Source Voltage650 V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Max Power Dissipation98W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3

Environmental

Operating Temperature-40°C~150°C(TJ)