IPW65R110CFDFKSA1

Infineon Technologies

IPW65R110CFDFKSA1

Datasheet

Analog & Power

MOSFET N-CH 650V 31.2A TO247-3

DiscontinuedTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs110mOhm @ 12.7A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3240 pF @ 100 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusNot For New Designs
SeriesCoolMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 1.3mA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C31.2A (Tc)
Max Power Dissipation277.8W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3-1

Environmental

Operating Temperature-55°C~150°C(TJ)