IPW65R099C6FKSA1

Infineon Technologies

IPW65R099C6FKSA1

Datasheet

Analog & Power

MOSFET N-CH 650V 38A TO247-3

DiscontinuedTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs99mOhm @ 12.8A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2780 pF @ 100 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusNot For New Designs
SeriesCoolMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 1.2mA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Max Power Dissipation278W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3-1

Environmental

Operating Temperature-55°C~150°C(TJ)