IPW65R048CFDAFKSA1

Infineon Technologies

IPW65R048CFDAFKSA1

Datasheet

Analog & Power

MOSFET N-CH 650V 63.3A TO247-3

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs48mOhm @ 29.4A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7440 pF @ 100 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusActive
SeriesCoolMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 2.9mA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C63.3A (Tc)
Max Power Dissipation500W (Tc)

Mechanical

PackageTube

Environmental

GradeAutomotive
Operating Temperature-40°C ~ 150°C (TJ)
QualificationAEC-Q101