IPW65R035CFD7AXKSA1

Infineon Technologies

IPW65R035CFD7AXKSA1

Datasheet

Analog & Power

MOSFET N-CH 650V 63A TO247-3-41

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs35mOhm @ 35.8A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7149 pF @ 400 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
PackagingTube
Part StatusActive
Series448
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 1.79mA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C63A (Tc)
Max Power Dissipation305W (Tc)

Environmental

GradeAutomotive
Operating Temperature-40°C ~ 150°C (TJ)
QualificationAEC-Q101