IPW60R280C6

Infineon Technologies

IPW60R280C6

Analog & Power

MOSFET N-CH 600V 13.8A TO247-3

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs280mOhm @ 6.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds950 pF @ 100 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusActive
SeriesCoolMOS™ C6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 430µA

Electrical

Drain-to-Source Voltage600 V
Current - Continuous Drain (Id) @ 25°C13.8A (Tc)
Max Power Dissipation104W (Tc)

Mechanical

PackageBulk
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3-41

Environmental

Operating Temperature-55°C~150°C(TJ)