Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1.1A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 100 V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Through Hole |
| Packaging | Bulk |
| Part Status | Discontinued at |
| Series | 448 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Drain-to-Source Voltage | 600 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Max Power Dissipation | 28.4W (Tc) |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
|---|---|
| Supplier Device Package | PG-TO251-3 |
| Operating Temperature | -55°C ~ 155°C (TJ) |
|---|