IPT65R105G7XTMA1

Infineon Technologies

IPT65R105G7XTMA1

Datasheet

Analog & Power

MOSFET N-CH 650V 24A 8HSOF

Obsolete8-PowerSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs105mOhm @ 8.9A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1670 pF @ 400 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesCoolMOS™ C7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 440µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Max Power Dissipation156W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerSFN
Supplier Device PackagePG-HSOF-8-2

Environmental

Operating Temperature-55°C~150°C(TJ)