IPT65R033G7XTMA1

Infineon Technologies

IPT65R033G7XTMA1

Datasheet

Analog & Power

MOSFET N-CH 650V 69A 8HSOF

Obsolete8-PowerSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs33mOhm @ 28.9A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5000 pF @ 400 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesCoolMOS™ C7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1.44mA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C69A (Tc)
Max Power Dissipation391W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerSFN
Supplier Device PackagePG-HSOF-8-2

Environmental

Operating Temperature-55°C ~ 150°C (TJ)