IPT60R080G7XTMA1

Infineon Technologies

IPT60R080G7XTMA1

Datasheet

Analog & Power

MOSFET N-CH 600V 29A 8HSOF

Active8-PowerSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs80mOhm @ 9.7A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1640 pF @ 400 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesCoolMOS™ G7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 490µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Max Power Dissipation167W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerSFN
Supplier Device PackagePG-HSOF-8-2

Environmental

Operating Temperature-40°C ~ 150°C (TJ)