IPT60R075CFD7XTMA1

Infineon Technologies

IPT60R075CFD7XTMA1

Datasheet

Analog & Power

MOSFET N-CH 600V 33A 8HSOF

Active8-PowerSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs75mOhm @ 11.4A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2103 pF @ 400 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesCoolMOS™ CFD7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 570µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Max Power Dissipation188W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerSFN
Supplier Device PackagePG-HSOF-8-1

Environmental

Operating Temperature-55°C~150°C(TJ)