IPT60R022S7XTMA1

Infineon Technologies

IPT60R022S7XTMA1

Datasheet

Analog & Power

MOSFET N-CH 600V 23A 8HSOF

Active8-PowerSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs22mOhm @ 23A, 12V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds5639 pF @ 300 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesCoolMOS™S7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 1.44mA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)12V
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Max Power Dissipation390W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerSFN
Supplier Device PackagePG-HSOF-8-2

Environmental

Operating Temperature-55°C~150°C(TJ)