IPT111N20NFDATMA1

Infineon Technologies

IPT111N20NFDATMA1

Datasheet

Analog & Power

MOSFET N-CH 200V 96A 8HSOF

Active8-PowerSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs11.1mOhm @ 96A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7000 pF @ 100 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 267µA

Electrical

Drain-to-Source Voltage200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C96A (Tc)
Max Power Dissipation375W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerSFN
Supplier Device PackagePG-HSOF-8-1

Environmental

Operating Temperature-55°C ~ 175°C (TJ)