IPT022N10NF2SATMA1

Infineon Technologies

IPT022N10NF2SATMA1

Datasheet

Analog & Power

MOSFET

Active8-PowerSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.25mOhm @ 150A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7300 pF @ 50 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesStrongIRFET™ 2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.8V @ 169µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C29A (Ta), 236A (Tc)
Max Power Dissipation3.8W (Ta), 250W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerSFN
Supplier Device PackagePG-HSOF-8

Environmental

Operating Temperature-55°C~175°C(TJ)