IPT012N08N5ATMA1

Infineon Technologies

IPT012N08N5ATMA1

Datasheet

Analog & Power

MOSFET N-CH 80V 300A 8HSOF

Active8-PowerSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.2mOhm @ 150A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds17000 pF @ 40 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.8V @ 280µA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C300A (Tc)
Max Power Dissipation375W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerSFN
Supplier Device PackagePG-HSOF-8-1

Environmental

Operating Temperature-55°C ~ 175°C (TJ)