IPT008N06NM5LFATMA1

Infineon Technologies

IPT008N06NM5LFATMA1

Datasheet

Analog & Power

TRENCH 40<-<100V PG-HSOF-8

Active8-PowerSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs0.8mOhm @ 150A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds980 pF @ 30 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.6V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C454A (Tc)
Max Power Dissipation278W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerSFN
Supplier Device PackagePG-HSOF-8

Environmental

Operating Temperature-55°C ~ 150°C (TJ)