IPS65R1K4C6

Infineon Technologies

IPS65R1K4C6

Analog & Power

MOSFET N-CH 650V 3.2A TO251-3

ActiveTO-251-3 Short Leads, IPak, TO-251AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.4Ohm @ 1A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds225 pF @ 100 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusActive
SeriesCoolMOS™ C6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 100µA

Electrical

Drain-to-Source Voltage650 V
Current - Continuous Drain (Id) @ 25°C3.2A (Tc)
Max Power Dissipation28W (Tc)

Mechanical

PackageBulk
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackagePG-TO251-3

Environmental

Operating Temperature-55°C~150°C(TJ)