IPQC60R010S7XTMA1

Infineon Technologies

IPQC60R010S7XTMA1

Datasheet

Analog & Power

MOSFET

Active22-PowerBSOP ModuleAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs10mOhm @ 50A, 12V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs318 nC @ 12 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesCoolMOS™ S7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 3.08mA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)12V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Max Power Dissipation694W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case22-PowerBSOP Module
Supplier Device PackagePG-HDSOP-22

Environmental

Operating Temperature-55°C ~ 150°C (TJ)