IPP80P04P4L06AKSA1

Infineon Technologies

IPP80P04P4L06AKSA1

Analog & Power

MOSFET P-CH 40V 80A TO220-3

ObsoleteTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs6.7mOhm @ 80A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6580 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusObsolete
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)+5V, -16V
Vgs(th) (Max) @ Id2.2V @ 150µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Max Power Dissipation88W (Tc)

Mechanical

PackageTube

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101