IPP80P03P4L04AKSA2

Infineon Technologies

IPP80P03P4L04AKSA2

Datasheet

Analog & Power

MOSFET P-CH 30V 80A TO220-3

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.4mOhm @ 80A, 10V
Base Product NumberIPP80P03
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds11300 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusActive
SeriesAutomotive, AEC-Q101, OptiMOS®-P2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)+5V, -16V
Vgs(th) (Max) @ Id2V @ 253µA

Electrical

Drain-to-Source Voltage30 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Max Power Dissipation137W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackagePG-TO220-3-1

Environmental

Operating Temperature-55°C~175°C(TJ)