IPP65R115CFD7AAKSA1

Infineon Technologies

IPP65R115CFD7AAKSA1

Datasheet

Analog & Power

MOSFET N-CH 650V 21A TO220-3

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs115mOhm @ 9.7A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1950 pF @ 400 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusActive
SeriesAutomotive, AEC-Q101, CoolMOS™ CFD7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 490µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Max Power Dissipation114W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackagePG-TO220-3

Environmental

Operating Temperature-40°C~150°C(TJ)