IPP65R099CFD7AAKSA1

Infineon Technologies

IPP65R099CFD7AAKSA1

Datasheet

Analog & Power

MOSFET N-CH 650V 24A TO220-3

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs99mOhm @ 12.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2513 pF @ 400 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
PackagingTube
Part StatusActive
Series*
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 630µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Max Power Dissipation127W (Tc)

Environmental

GradeAutomotive
Operating Temperature-40°C ~ 150°C (TJ)
QualificationAEC-Q101