IPP220N25NFD

Infineon Technologies

IPP220N25NFD

Analog & Power

MOSFET N-CH 250V 61A TO220-3

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs22mOhm @ 61A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7076 pF @ 125 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusActive
SeriesOptiMOS™FD
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 270µA

Electrical

Drain-to-Source Voltage250 V
Current - Continuous Drain (Id) @ 25°C61A (Tc)
Max Power Dissipation300W (Tc)

Mechanical

PackageBulk
Package / CaseTO-220-3
Supplier Device PackagePG-TO220-3

Environmental

Operating Temperature-55°C~175°C(TJ)