IPP126N10N3G

Infineon Technologies

IPP126N10N3G

Analog & Power

MOSFET N-CH 100V 58A TO220-3

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs12.6mOhm @ 46A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 50 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusActive
SeriesOptiMOS™ 3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 46µA

Electrical

Drain-to-Source Voltage100 V
Current - Continuous Drain (Id) @ 25°C58A (Tc)
Max Power Dissipation94W (Tc)

Mechanical

PackageBulk
Package / CaseTO-220-3
Supplier Device PackagePG-TO220-3

Environmental

Operating Temperature-55°C~175°C(TJ)