IPP120N08S403AKSA1

Infineon Technologies

IPP120N08S403AKSA1

Datasheet

Analog & Power

MOSFET N-CH 80V 120A TO220-3

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.8mOhm @ 100A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds11550 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 223µA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Max Power Dissipation278W (Tc)

Mechanical

PackageTube

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101