IPP085N06LGAKSA1

Infineon Technologies

IPP085N06LGAKSA1

Analog & Power

MOSFET N-CH 60V 80A TO-220

ObsoleteTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8.5mOhm @ 80A. 10V
Base Product NumberIPP085N
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3500 pF @ 30 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusObsolete
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 125µA

Electrical

Drain-to-Source Voltage60 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackagePG-TO220-3-1