IPP076N15N5AKSA1

Infineon Technologies

IPP076N15N5AKSA1

Datasheet

Analog & Power

MOSFET N-CH 150V 112A TO220-3

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7.6mOhm @ 56A, 10
FET FeatureStandard
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4700 pF @ 75 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusActive
SeriesOptiMOS™ 5
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.6V @ 160µA

Electrical

Drain-to-Source Voltage150 V
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Current - Continuous Drain (Id) @ 25°C112A (Tc)
Max Power Dissipation214W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackagePG-TO220-3

Environmental

Operating Temperature-55°C ~ 175°C (TJ)