IPP019N06NF2SAKMA1

Infineon Technologies

IPP019N06NF2SAKMA1

Datasheet

Analog & Power

TRENCH 40<-<100V PG-TO220-3

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.9mOhm @ 100A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7300 pF @ 30 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusActive
SeriesStrongIRFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.3V @ 129µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C33A (Ta), 185A (Tc)
Max Power Dissipation3.8W (Ta), 188W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackagePG-TO220-3-U05

Environmental

Operating Temperature-55°C~175°C(TJ)