IPN70R450P7SATMA1

Infineon Technologies

IPN70R450P7SATMA1

Datasheet

Analog & Power

MOSFET N-CH 700V 10A SOT223

ActiveTO-261-4, TO-261AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs450mOhm @ 2.3A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds424 pF @ 400 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesCoolMOS™ P7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id3.5V @ 120µA

Electrical

Drain-to-Source Voltage700 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Max Power Dissipation7.1W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-261-4, TO-261AA
Supplier Device PackagePG-SOT223

Environmental

Operating Temperature-40°C ~ 150°C (TJ)