IPN60R1K5PFD7SATMA1

Infineon Technologies

IPN60R1K5PFD7SATMA1

Datasheet

Analog & Power

MOSFET N-CH 650V 3.6A SOT223

ActiveTO-261-4, TO-261AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.5Ohm @ 700mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds169 pF @ 400 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesCoolMOS™PFD7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 40µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C3.6A (Tc)
Max Power Dissipation6W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Supplier Device PackagePG-SOT223-3

Environmental

Operating Temperature-40°C~150°C(TJ)