IPN50R2K0CEATMA1

Infineon Technologies

IPN50R2K0CEATMA1

Datasheet

Analog & Power

MOSFET N-CH 500V 3.6A SOT223

ActiveTO-261-4, TO-261AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2Ohm @ 600mA, 13V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds124 pF @ 100 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesCoolMOS™ CE
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 50µA

Electrical

Drain-to-Source Voltage500 V
Drive Voltage (Max Rds On, Min Rds On)13V
Current - Continuous Drain (Id) @ 25°C3.6A (Tc)
Max Power Dissipation5W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-261-4, TO-261AA
Supplier Device PackagePG-SOT223-3

Environmental

Operating Temperature-40°C ~ 150°C (TJ)