IPLK60R600PFD7ATMA1

Infineon Technologies

IPLK60R600PFD7ATMA1

Datasheet

Analog & Power

MOSFET N-CH 600V 7A THIN-PAK

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs600mOhm @ 1.7A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds344 pF @ 400 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesCoolMOS™ PFD7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 80µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Max Power Dissipation45W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device PackagePG-TDSON-8-52

Environmental

Operating Temperature-55°C~150°C(TJ)