IPLK60R360PFD7ATMA1

Infineon Technologies

IPLK60R360PFD7ATMA1

Datasheet

Analog & Power

MOSFET N-CH 600V 13A THIN-PAK

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs360mOhm @ 2.9A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds534 pF @ 400 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesCoolMOS™ PFD7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 140µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Max Power Dissipation74W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device PackagePG-TDSON-8-52

Environmental

Operating Temperature-55°C~150°C(TJ)