Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 660mOhm @ 2.1A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Series | CoolMOS™ E6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |
| Drain-to-Source Voltage | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Max Power Dissipation | 63W (Tc) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | 4-PowerTSFN |
| Supplier Device Package | PG-VSON-4 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
|---|