IPL65R115CFD7AUMA1

Infineon Technologies

IPL65R115CFD7AUMA1

Datasheet

Analog & Power

COOLMOS CFD7 SUPERJUNCTION MOSFE

Active4-PowerTSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs115mOhm @ 9.7A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1942 pF @ 400 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesCoolMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 480µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Max Power Dissipation144W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case4-PowerTSFN
Supplier Device PackagePG-VSON-4

Environmental

Operating Temperature-40°C ~ 150°C (TJ)