IPL60R385CPAUMA1

Infineon Technologies

IPL60R385CPAUMA1

Datasheet

Analog & Power

MOSFET N-CH 600V 9A 4VSON

Discontinued4-PowerTSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs385mOhm @ 5.2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds790 pF @ 100 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusNot For New Designs
SeriesCoolMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 340µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Max Power Dissipation83W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case4-PowerTSFN
Supplier Device PackagePG-VSON-4

Environmental

Operating Temperature-40°C~150°C(TJ)