IPL60R210P6AUMA1

Infineon Technologies

IPL60R210P6AUMA1

Datasheet

Analog & Power

MOSFET N-CH 600V 19.2A 4VSON

Active4-PowerTSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs210mOhm @ 7.6A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1750 pF @ 100 V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesCoolMOS™ P6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 630µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C19.2A (Tc)
Max Power Dissipation151W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case4-PowerTSFN
Supplier Device PackagePG-VSON-4

Environmental

Operating Temperature-40°C~150°C(TJ)