Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 500mOhm @ 6.6A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 100 V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Through Hole |
| Product Status | Active |
| Series | CoolMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.5V @ 740µA |
| Drain-to-Source Voltage | 900 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Max Power Dissipation | 156W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Supplier Device Package | PG-TO262-3-1 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|