IPI50N12S3L15AKSA1

Infineon Technologies

IPI50N12S3L15AKSA1

Analog & Power

MOSFET N-CHANNEL_100+

ObsoleteTO-262-3 Long Leads, I²Pak, TO-262AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs15.7mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4180 pF @ 25 V
ManufacturerInfineon Technologies
Mounting TypeThrough Hole
Product StatusObsolete
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.4V @ 60µA

Electrical

Drain-to-Source Voltage120 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Max Power Dissipation100W (Tc)

Mechanical

PackageBulk

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101