Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 80A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4750 pF @ 37.5 V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Through Hole |
| Product Status | Active |
| Series | OptiMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.8V @ 91µA |
| Drain-to-Source Voltage | 75 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Max Power Dissipation | 150W (Tc) |
| Package | Bulk |
|---|---|
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Supplier Device Package | PG-TO262-3 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
|---|