IPG20N06S415ATMA2

Infineon Technologies

IPG20N06S415ATMA2

Datasheet

Analog & Power

MOSFET 2N-CH 60V 20A 8TDSON

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs15.5mOhm @ 17A, 10V
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2260pF @ 25V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 20µA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C20A
Power - Max50W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerVDFN
Supplier Device PackagePG-TDSON-8-4

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101