IPG20N06S3L-35

Infineon Technologies

IPG20N06S3L-35

Analog & Power

MOSFET 2N-CH 55V 20A 8TDSON

Obsolete8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs35mOhm @ 11A, 10V
Base Product NumberIPG20N
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1730pF @ 25V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount
Product StatusObsolete
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.2V @ 15µA

Electrical

Drain-to-Source Voltage55V
Current - Continuous Drain (Id) @ 25°C20A
Power - Max30W

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Supplier Device PackagePG-TDSON-8-4

Environmental

Operating Temperature-55°C ~ 175°C (TJ)