IPG20N06S2L50AATMA1

Infineon Technologies

IPG20N06S2L50AATMA1

Datasheet

Analog & Power

MOSFET 2N-CH 55V 20A 8TDSON

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs50mOhm @ 15A, 10V
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds560pF @ 25V
ManufacturerInfineon Technologies
Mounting TypeSurface Mount, Wettable Flank
Product StatusActive
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 19µA

Electrical

Drain-to-Source Voltage55V
Current - Continuous Drain (Id) @ 25°C20A
Power - Max51W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerVDFN
Supplier Device PackagePG-TDSON-8-10

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101