Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 18.4mOhm @ 17A, 10V |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 789pF @ 25V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Surface Mount, Wettable Flank |
| Product Status | Active |
| Series | OptiMOS™-T2 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 8µA |
| Drain-to-Source Voltage | 40V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Power - Max | 26W (Tc) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-10 |
| Grade | Automotive |
|---|---|
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Qualification | AEC-Q101 |